Perovskite-based devices

Hysteresis in organic-inorganic hybrid perovskites (OIPs) is a result of defect migration under an electric field. This phenomenon has potential applications in computer memory. Especially, the hysteretic behavior which is explained by the ion migration under electric field can extend the OIP material applications to resistive switching memories and artificial synapses. Our lab focused on resistive switching effect by halide-ion migration (e.g., migration of iodine vacancies) which have potential to be applied in next generation memory.

Our research is the applications of organic-inorganic hybrid perovskites (OIPs) to optoelectronic device such as photodetector. Moreover, integrating two-dimensional (2D) OIPs with the 2D materials including graphenes give opportunities for various options in constructing new types of heterojunctions with novel functionalities including enhanced charge transport properties. Our lab present a sequential vapor deposition method to fabricate 2D OIP lateral heterostructure films (C4H9NH3)2PbI4 (BA2PbI4)-(C4H9NH3)2(CH3NH3)Pb2I7 (BA2MAPb2I7) for photodetector applications. A photodetector based on the lateral structure (BA2PbI4-BA2MAPb2I7) showed larger photocurrent and higher on/off ratio (>102) than those of single materials-based devices (BA2PbI4, BA2MAPb2I7). Our method to fabricate 2D OIP lateral heterostructure suggests a simple way to synthesize 2D perovskite heterostructure and may open the possibility of 2D OIP perovskites to be integrated in emerging optoelectronic devices.