Publications

[145] Dongshin Kim, Ik-Jyae Kim, and Jang-Sik Lee*, "Demonstration of Threshold-switching Memory Devices Using EMIm(AlCl3)Cl and ZnO for Neuromorphic Applications," Nanotechnology 35, 015203 (2024)

[146] Ik-Jyae Kim and Jang-Sik Lee*, "Ferroelectric transistor with grooved structure for reliable multi-level characteristics," IEEE Electron Device Letters 45, 352 - 355 (2024)

[147] Ik-Jyae Kim and Jang-Sik Lee*, "Dopant Engineering of Hafnia-Based Ferroelectrics for Long Data Retention and High Thermal Stability," Small 20, 2306871 (2024)

[148] Ik-Jyae Kim and Jang-Sik Lee*, "Unlocking large memory windows and 16-level data per cell memory operations in hafnia-based ferroelectric transistors," Science Advances 10, eadn1345 (2024)

[149] Ik-Jyae Kim, Jiwoung Choi, and Jang-Sik Lee*, "Exploring Disturb Characteristics in 2D and 3D Ferroelectric NAND Memory Arrays for Next-Generation Memory Technology," ACS Applied Materials & Interfaces 16, 33763-33770 (2024)

[150] Ik-Jyae Kim, Jiwoung Choi, and Jang-Sik Lee*, "Crystal Filter-Mediated Grain Alignment in Poly-Si Thin-Film Transistors for Next-Generation Ferroelectric Memory Devices," IEEE Electron Devce Letters 45, 1590 - 1593 (2024)

[151] Ik-Jyae Kim, Jiwoung Choi, and Jang-Sik Lee*, "Hafnia-Based Ferroelectric Transistor with Poly-Si Gates for Gate-First Three-Dimensional NAND Structures," ACS Applied Materials & Interfaces  16, 66273-66279 (2024)

[138] Ik-Jyae Kim, Min-Kyu Kim, and Jang-Sik Lee*, "Highly-scaled and fully-integrated 3-dimensional ferroelectric transistor array for hardware implementation of neural networks," Nature Communications 14, 504 (2023)

[139] Ik-Jyae Kim, Min-Kyu Kim, and Jang-Sik Lee*, "Design strategy to improve memory window in ferroelectric transistors with oxide semiconductor channel," IEEE Electron Device Letters 44, 249-252 (2023)

[140] Dongshin Kim and Jang-Sik Lee*, "Liquid-based Memory Devices for Next-Generation Computing," ACS Applied Electronic Materials 5, 664-673 (2023) 

[141] Goutam Kumar Gupta, Ik-Jyae Kim, Youngjun Park, Min-Kyu Kim, and Jang-Sik Lee*, "Inorganic Perovskite Quantum Dot-Mediated Photonic Multimodal Synapse," ACS Applied Materials & Interfaces 15, 18055-18064 (2023)

[142] Min-Kyu Kim,+ Ik-Jyae Kim,+ and Jang-Sik Lee*, "Defect Engineering of Hafnia-Based Ferroelectric Materials for High-Endurance Memory Applications," ACS Omega 8, 18180-18185 (2023)

[143] Ik-Jyae Kim and Jang-Sik Lee*, "Ferroelectric Transistors for Memory and Neuromorphic Device Applications," Advanced Materials 35, 2206864 (2023)

[144] Ik-Jyae Kim and Jang-Sik Lee*, ""Low-Thermal-Budget Fabrication of Transparent Ferroelectric Thin-Film Transistors on Glass Substrates," IEEE Electron Device Letters 44, 1460-1463 (2023)

[130] Akshay Sahota , Harrison Sejoon Kim , Jaidah Mohan , Yong Chan Jung , Heber Hernandez-Arriaga , Dan N. Le , Si Joon Kim , Jang-Sik Lee , Jinho Ahn , and Jiyoung Kim, "Highly Reliable Selection Behavior With Controlled Ag Doping of Nano-Polycrystalline ZnO Layer for 3D X-Point Framework," IEEE Electron Device Letters 43, 21-24 (2022)

[131] Youngjun Park and Jang-Sik Lee*, "Controlling the Grain Size of Dion–Jacobson-Phase Two-Dimensional Layered Perovskite for Memory Application," ACS Applied Materials & Interfaces 14, 4371-4377 (2022)

[132] Eun-Kyeong Jang,+ Ik-Jyae Kim,+ Cheon An Lee, Chiweon Yoon, and Jang-Sik Lee*,  "Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization," IEEE Journal of the Electron Devices Society 10, 104-108 (2022) (+Equal contribution)

[133] Min-Kyu Kim,+ Ik-Jyae Kim,+ and Jang-Sik Lee*,  "CMOS-compatible compute-in-memory accelerators based on integrated ferroelectric synaptic arrays for convolution neural networks," Science Advances 8, eabm8537 (2022) (+Equal contribution)

[134] Dongshin Kim and Jang-Sik Lee*, "Neurotransmitter-induced Excitatory and Inhibitory Functions in Artificial Synapses," Advanced Functional Materials 32, 2200497 (2022)

[135] Youngjun Park and Jang-Sik Lee*, "Metal Halide Perovskite-Based Memristors for Emerging Memory Applications," The Journal of Physical Chemistry Letters 13, 5638-5647 (2022)

[136] Ik-Jyae Kim, Min-Kyu Kim, and Jang-Sik Lee*, "Vertical ferroelectric thin-film transistor array with a 10-nm gate length for high-density three-dimensional memory applications," Applied Physics Letters 121, 042901 (2022)

[137] Dongshin Kim and Jang-Sik Lee*, "Emulating the Signal Transmission in a Neural System Using Polymer Membranes," ACS Applied Materials & Interfaces 14, 42308-42316 (2022)

[119] Bohee Hwang,+ Youngjun Park,+ and Jang-Sik Lee*, "Impact of grain sizes on optoelectronic performances of 2D Ruddlesden-Popper perovskite-based photodetectors," Journal of Materials Chemistry C 9, 110-116 (2021) (+Equal contribution)

[120] Min-Kyu Kim,+ Ik-Jyae Kim,+ and Jang-Sik Lee*,  "CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory," Science Advances 7, eabe1341 (2021) (+Equal contribution)

[121] Youngjun Park and Jang-Sik Lee*, "Bifunctional Silver-Doped ZnO for Reliable and Stable Organic-Inorganic Hybrid Perovskite Memory," ACS Applied Materials & Interfaces 13, 1021-1026 (2021)

[122] Min-Kyu Kim,+ Ik-Jyae Kim,+ and Jang-Sik Lee*, "Oxide semiconductor-based ferroelectric thin-film transistors for advanced neuromorphic computing," Applied Physics Letters 118, 032902 (2021) (+Equal contribution)

[123] Youngjun Park, Min-Kyu Kim, and Jang-Sik Lee*, "2D layered metal-halide perovskite/oxide semiconductor-based broadband optoelectronic synaptic transistors with long-term visual memory," Journal of Materials Chemistry C 9,  1429-1436 (2021)

[124] Youngjun Park, Min-Kyu Kim, and Jang-Sik Lee*, "Ion-gating synaptic transistors with long-term synaptic weight modulation," Journal of Materials Chemistry C 9,  5396-5402 (2021)

[125] Dongshin Kim, Ik-Jyae Kim, and Jang-Sik Lee*, "Memory Devices for Flexible and Neuromorphic Device Applications," Advanced Intelligent Systems 3, 2000206 (2021) [Invited Review] 

[126] Harrison Sejoon Kim, Akshay Sahota, Jaidah Mohan, Antonio T. Lucero, Yong Chan Jung, Minji Kim, Jang-Sik Lee, Rino Choi, Si Joon Kim, and Jiyoung Kim, "Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by Facile Electrochemical Deposition for an X-Point Selector," ACS Applied Electronic Materials 3, 2309-2316 (2021)

[127] Youngjun Park,+ Seong Hun Kim,+ Donghwa Lee*, and Jang-Sik Lee*, "Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory," Nature Communications 12, 3527 (2021) (+Equal contribution)

[128] Kwang-Hyun Kim,+ Youngjun Park,+ Min-Kyu Kim, and Jang-Sik Lee*, "Voltage-Tunable Ultra-Steep Slope Atomic Switch with Selectivity over 1010," Small 17, 2100401 (2021) (+Equal contribution) Selected as back cover   

[129] Akshay Sahota, Harrison Sejoon Kim, Jaidah Mohan, Dan N. Le, Yong Chan Jung, Si Joon Kim, Jang-Sik Lee, Jinho Ahn, Heber Hernandez-Arriaga, and Jiyoung Kim, "Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors," AIP Advances 11, 115213 (2021)

[111] Myung-Joo Park,+ Youngjun Park,+ and Jang-Sik Lee*, "Solution-Processed Multi-Terminal Artificial Synapses Based on Ion-Doped Solid Electrolytes," ACS Applied Electronic Materials 2, 339-345 (2020) (+Equal contribution)

[112] Min-Kyu Kim and Jang-Sik Lee*, "Synergistic Improvement of Long-Term Plasticity in Photonic Synapses using Ferroelectric Polarization in Hafnia-based Oxide-semiconductor Transistors," Advanced Materials 32, 1907826 (2020)

[113] Ik-Jyae Kim, Min-Kyu Kim, Youngjun Park, and Jang-Sik Lee*, "Heterosynaptic Plasticity Emulated by Liquid Crystal-Carbon Nanotube Composites with Modulatory Interneurons," ACS Applied Materials & Interfaces 12, 27467-27475 (2020)

[114] Youngjun Park,+ Min-Kyu Kim,+ and Jang-Sik Lee*, "Emerging memory devices for artificial synapses," Journal of Materials Chemistry C 8, 9163 - 9183 (2020) [Review article] (+Equal contribution)

[115] Ju-Hyun Jung,+ Seong Hun Kim,+ Youngjun Park,+ Donghwa Lee*, and Jang-Sik Lee*, "Metal-Halide Perovskite Design for Next-Generation Memories: First-Principles Screening and Experimental Verification,"  Advanced Science 7, 2001367 (2020) (+Equal contribution)

[116] Youngjun Park, Min-Kyu Kim, and Jang-Sik Lee*, "Artificial synaptic transistors based on Schottky barrier height modulation using reduced graphene oxides," Carbon 165, 455-460 (2020)

[117] Dongshin Kim and Jang-Sik Lee*, "Designing artificial sodium ion reservoirs to emulate biological synapses," NPG Asia Materials 12, 62 (2020)

[118] Min-Kyu Kim,+ Youngjun Park,+ Ik-Jyae Kim, and Jang-Sik Lee*, "Emerging Materials for Neuromorphic Devices and Systems," iScience 23, 101846 (2020) [Invited Review] (+Equal contribution)

[104] Bohee Hwang and Jang-Sik Lee*, "Recent Advances in Memory Device with Hybrid Materials," Advanced Electronic Materials 5, 1800519 (2019) [Invited Review] 

[105] Myung-Joo Park and Jang-Sik Lee*, "Foldable and Biodegradable Energy Storage Devices on Copy Papers," Advanced Electronic Materials 5, 1800411 (2019)

[106] Bohee Hwang and Jang-Sik Lee*, "Two-Dimensional Perovskite-Based Self-Aligned Lateral Heterostructure Photodetectors Utilizing Vapor Deposition," Advanced Optical Materials 7, 1801356 (2019)

[107] Min-Kyu Kim and Jang-Sik Lee*, "Ferroelectric Analog Synaptic Transistors," Nano Letters 19, 2044-2050 (2019)

[108] Dongshin Kim and Jang-Sik Lee*, "Liquid-based Memory and Artificial Synapse," Nanoscale 11, 9726-9732 (2019)

[109] Dongwoo Lee,+ Bohee Hwang,+ and Jang-Sik Lee*, "Impact of Grain Sizes on Programmable Memory Characteristics in Two-Dimensional Organic-Inorganic Hybrid Perovskite Memory," ACS Applied Materials & Interfaces 11, 20225-20231 (2019) (+Equal contribution)

[110] Eun-Kyeong Jang, Youngjun Park, and Jang-Sik Lee*, "Reversible uptake and release of sodium ions in layered SnS2-reduced graphene oxide composites for neuromorphic devices," Nanoscale 11, 15382-15388 (2019)

[97] Min-Kyu Kim and Jang-Sik Lee*, "Short-Term Plasticity and Long-Term Potentiation in Artificial Biosynapses with Diffusive Dynamics," ACS NANO 12, 1680-1687 (2018)

[98] Min-Kyu Kim and Jang-Sik Lee*, "Ultralow Power Consumption Flexible Biomemristors," ACS Applied Materials & Interfaces 10, 10280-10286 (2018)

[99] Youngjun Park, Un-Bin Han, Min-Kyu Kim, and Jang-Sik Lee*, "Solution-Processed Flexible Threshold Switch Devices", Advanced Electronic Materials 4, 1700521 (2018)

[100] Sung-Jo Kim,+ Bohee Hwang,+ and Jang-Sik Lee*, "Control of Gold Nanoparticle-Protein Aggregates in Albumen Matrix for Configurable Switching Devices", Advanced Materials Interfaces 5, 1800086 (2018) (+Equal contribution)

[101] Bohee Hwang and Jang-Sik Lee*, "Lead-Free, Air-Stable Hybrid Organic-Inorganic Perovskite Resistive Switching and Multilevel Data Storage," Nanoscale 10, 8578-8584 (2018)

[102] Niloufar Raeis-Hosseini, Youngjun Park, and Jang-Sik Lee*, "Flexible Artificial Synaptic Devices Based on Collagen from Fish Protein with Spike-Timing Dependent Plasticity," Advanced Functional Materials 28, 1800553 (2018)

[103] Youngjun Park, Myung-Joo Park, and Jang-Sik Lee*, "Reduced Graphene Oxide-Based Artificial Synapse Yarns for Wearable Textile Device Applications," Advanced Functional Materials 28, 1804123 (2018) 

[87] Jun-Ho Park,+ Myung-Joo Park,+ and Jang-Sik Lee*, "Dry writing highly conductive electrodes on papers by silver nanoparticle-graphene hybrid pencils," Nanoscale 9, 555-561 (2017) (+Equal contribution) Selected as 2017 Nanoscale HOT Article Collection

[88] Youngjun Park and Jang-Sik Lee*, "Flexible Multistate Data Storage Devices Fabricated Using Natural Lignin at Room Temperature," ACS Applied Materials & Interfaces 9, 6207−6212 (2017)

[89] Un-Bin Han, Donghwa Lee, and Jang-Sik Lee*, "Reliable current changes with selectivity ratio above 109 observed in lightly doped zinc oxide films," NPG Asia Materials 9, e351 (2017)

[90] Bohee Hwang, Chungwan Gu, Donghwa Lee, and Jang-Sik Lee*, "Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory," Scientific Reports 7, 43794 (2017)

[91] Masoud Akbari,+ Min-Kyu Kim,+ Dongshin Kim, and Jang-Sik Lee*, "Reproducible and reliable resistive switching behaviors of AlOx/HfOx bilayer structures with Al electrode by atomic layer deposition," RSC Advances 7, 16704-16708 (2017) (+Equal contribution)

[92] Bohee Hwang and Jang-Sik Lee*, "Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air," Scientific Reports 7, 673 (2017)

[93] Myung-Joo Park and Jang-Sik Lee*, "Zeolitic-imidazole framework thin film-based flexible resistive switching memory," RSC Advances 7, 21045-21049 (2017)

[94] Bohee Hwang and Jang-Sik Lee*, "A strategy to design high-density nanoscale devices utilizing vapor-deposition of metal-halide perovskite materials," Advanced Materials 29, 1701048  (2017)  Selected as inside front cover   

[95] Youngjun Park and Jang-Sik Lee*, "Artificial Synapses with Short- and Long-Term Memory for Spiking Neural Networks based on Renewable Materials," ACS NANO 11, 8962-8969 (2017)

[96] Niloufar Raeis-Hosseini and Jang-Sik Lee*, (Review article) "Resistive switching memory using biomaterials," Journal of Electroceramics 39, 223-238 (2017)

[76] Ji-MIn Song and Jang-Sik Lee*, "Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth," Scientific Reports 6, 18967 (2016)

[77] Kyuhyun Park and Jang-Sik Lee*,"Flexible resistive switching memory with Ni/CuOx/Ni structure by electrochemical deposition process," Nanotechnology 27, 125203 (2016)

[78] Kyuhyun Park and Jang-Sik Lee*, "Reliable resistive switching memory based on oxygen-vacancy-controlled bilayer structures," RSC Advances 6, 21736-21741 (2016)

[79] Masoud Akbari and Jang-Sik Lee*, "Control of resistive switching behaviors of solution-processed HfOx-based resistive switching memory devices by n-type doping," RSC Advances 6, 21917-21921 (2016)

[80] Kyuhyun Park and Jang-Sik Lee*, "Controlled synthesis of Ni/CuOx/Ni nanowires by electrochemical deposition with self-compliance bipolar resistive switching," Scientific Reports 6, 23069 (2016)

[81] Niloufar Raeis-Hosseini and Jang-Sik Lee*, "Controlling the Resistive Switching Behavior in Starch-Based Flexible Biomemristors," ACS Applied Materials & Interfaces 8, 7326-7332 (2016)

[82] Chungwan Gu and Jang-Sik Lee*, "Patterning of Amorphous-InGaZnO Thin-Film Transistors by Stamping of Surface-Modified Polydimethylsiloxane," RSC Advances 6, 43147-43151 (2016)

[83] Un-Bin Han and Jang-Sik Lee*, "Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory," Scientific Reports 6, 25537 (2016)

[84] Chungwan Gu and Jang-Sik Lee*, "Flexible Hybrid Organic-Inorganic Perovskite Memory," ACS NANO 10, 5413-5418 (2016)

[85] Un-Bin Han and Jang-Sik Lee*, "Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications," Scientific Reports 6, 28966 (2016)

[86] Min-Kyu Kim and Jang-Sik Lee*, "Design of Electrodeposited Bilayer Structures for Reliable Resistive Switching with Self Compliance," ACS Applied Materials & Interfaces 8, 32918–32924 (2016)

[73] Young-Su Park and Jang-Sik Lee*, "Design of an Efficient Charge-Trapping Layer with a Built-In Tunnel Barrier for  Reliable Organic Transistor Memory," Advanced Materials 27, 706-711 (2015)

[74] Niloufar Raeis Hosseini and Jang-Sik Lee*, "Resistive Swiching Memory Based on Bioinspired Natural Solid Polymer Electrolytes,"  ACS NANO 9, 419-426 (2015)

[75] Niloufar Raeis Hosseini and Jang-Sik Lee*, "Biocompatible and Flexible Chitosan-Based Resistive Switching Memory with Magnesium Electrodes," Advanced Functional Materials 25, 5586-5592 (2015) Selected as inside front cover

[71] Chaewon Kim, Ji-Min Song, Jang-Sik Lee* and Mi Jung Lee, "All-solution-processed nonvolatile flexible nano-floating gate memory devices," Nanotechnology 25, 014016 (2014).

[72] Saunguen Park, Sangchul Lee, Greg Mordi, Srikar Jandhyala, Min-Woo Ha, Jang-Sik Lee, Luigi Colombo, Robert M. Wallace, Byoung Hun Lee, Jiyoung Kim "Triangular-Pulse Measurement for hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors," IEEE Electron Device Letters 35, 277-279 (2014).

[68] Sangwook Kim, Jae Chul Park, Dae Hwan Kim, and Jang-Sik Lee*,"Effects of Hf Incorporation on Negative Bias-Illumination Stress Stability in Hf-In-Zn-O Thin-Film Transistors," Jpn. J. Appl. Phys. 52, 041701 (2013).

[69] Jang-Sik Lee*, "Nonvolatile memory devices based on self-assembled nanocrystals," Physica E 51, 94-103 (2013).

[70] Hyunchul Kim, Changdeuck Bae, Hyun Suk Jung, Jang-Sik Lee, Hyunjung Shin, "Direct patterning of metal oxides by hard templates and atomic layer deposition," Intertnational Journal of Nanotechnology 10, 692-701 (2013).

[63] Si-Hoon Lyu and Jang-Sik Lee,* "Highly scalable resistive switching memory cells using pore-size-controlled nanoporous alumina templates," Journal of Materials Chemistry 22, 1852 (2012).

[64] Young-Su Park, Soo-Jin Kim, Si-Hoon Lyu, Byoung Hoon Lee, Myung Mo Sung, Jaegab Lee, and Jang-Sik Lee*, " Memory Effect of Low-temperature Processed ZnO Thin-film Transistors having Metallic Nanoparticles as Charge Trapping Elements," J. Nanosci. Nanotech., Vol. 12, 1344-1347, (2012).

[65] Jang-Sik Lee, Hyunchul Kim, Pil-Ryung Cha, Jiyoung Kim, and Hyunjung Shin," Size Effects on the Stabilization and Growth of Tetragonal ZrO2 Crystallites in Nanotubular Structure," J. Nanosci. Nanotech., Vol. 12, 3177-3180, (2012).

[66] Adila Rani, Ji-Min Song, Mi jung Lee, and Jang-Sik Lee*," Reduced graphene oxide based flexible organic charge trap memory devices ," Appl. Phys. Lett., 101, 233308 (2012).

[67] Mohammad Arifur Rahman, Hyunho Kim, Young Kyu Lee, Chiyoung Lee, Hosoek Nam, Jang-Sik Lee, Hoesup Soh, Jong-Kwon Lee, Eun-Gu Lee, and Jaegab Lee*," High Performance Flexible Organic Thin Film Transistors (OTFTs) with Octadecyltrichlorsilane/Al2O3/Poly(4-vinylphenol) Multilayer Insulators ," J. Nanosci. Nanotech., 12, 1348-1352, (2012).

[57] Jang-Sik Lee,* Yong-Mu Kim, Jeong-Hwa Kwon, Jae Sung Sim, Hyunjung Shin, Byeong-Hyeok Sohn, and Q. X. Jia,   Multilevel Data Storage Memory Devices Based on the Controlled Capacitive Coupling of Trapped Electrons , Advanced Materials, Vol. 23, Issue 18, pp. 2064-2068 (2011).

[58] Seung Jae Baik, Koeng Su Lim, Wonsup Choi, Hyunjun Yoo, Jang-Sik Lee, and Hyunjung Shin,   Lateral redistribution of trapped charges in nitride/oxide/Si (NOS) investigated by electrostatic force microscopy , Nanoscale, Vol. 3, Issue 6, pp. 2560-2565 (2011).

[59] Jang-Sik Lee,*  (Feature article) Progress in non-volatile memory devices based on nanostructured materials and nanofabrication , Journal of Materials Chemistry , Vol. 21, pp. 14097-14112 (2011).

[60] Soo-Jin Kim, Ji-Min Song, and Jang-Sik Lee*,   Transparent organic thin-film transistors and nonvolatile memory devices fabricated on flexible plastic substrates , Journal of Materials Chemistry, Vol. 21, pp. 14516-14522 (2011).

[61] Jang-Sik Lee,*   Review Paper: Nano-Floating Gate Memory Devices , Electronic Materials Letters, 7(3), 175-183 (2011).

[62] Jaeman Jang, Jae Chul Park, Dongsik Kong, Dong Myong Kim, Jang-Sik Lee, Byeong-Hyeok Sohn, Il Hwan Cho, and Dae Hwan Kim,   Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer , IEEE Trans. Electron Dev., 58(11), 3940-3947 (2011).

[48] Soo-Jin Kim, Young-Su Park, Si-Hoon Lyu, and Jang-Sik Lee,*   Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers , Appl. Phys. Lett., January 22, 2010; Vol. 96, Article no. 033302.

[49] Yong-Mu Kim, Young-Su Park, Andrew O'Reilly, Jang-Sik Lee,*   Organic field-effect transistor-based nonvolatile memory devices having controlled metallic nanoparticle/polymer composite layers , Electrochem. Solid-State Lett., February 1, 2010; Vol. 13, pp. H134-H136.

[50] Changdeuck Bae, Dongjo Kim, Sunmi Moon, Taeyoung Choi, Youngmin Kim, Bo Sung Kim, Jang-Sik Lee, Hyunjung Shin, and Jooho Moon,   Aging Dynamics of Solution-Processed Amorphous Oxide Semiconductor Field Effect Transistors ,  ACS Applied Materials & Interfaces, February 26, 2010; Vol. 2, pp. 626-632.

[51] Yong-Mu Kim, Soo-Jin Kim, Jang-Sik Lee,*   Organic Transistor-based Nano-Floating Gate Memory Devices having Multi-Stack Charge Trapping Layers , IEEE Electron Device Lett., Vol. 31, Issue 5, pp. 503-505 (2010).

[52] Young-Su Park, Seungjun Chung, Soo-Jin Kim, Si-Hoon Lyu, Jae-Wan Jang, Soon-Ki Kwon, Yongtaek Hong, and Jang-Sik Lee,*   High-performance organic charge trap flash memory devices based on ink-jet printed 6,13-bis(triisopropylsilylethynyl) pentacene transistors , Appl. Phys. Lett., May 25, 2010; Vol. 96, Article no. 213107.  

[53] Soo-Jin Kim and Jang-Sik Lee,* Flexible Organic Transistor Memory Devices , Nano Letters, Vol. 10, No. 8, pp. 2884-2890 (2010).

[54] Jang-Sik Lee,* Recent progress in gold nanoparticle-based non-volatile memory devices , Gold Bulletin, Vol. 43, No. 3, pp. 189-199 (2010).

[55] Young-Su Park, Sang Yeol Lee, and Jang-Sik Lee,* Nanofloating Gate Memory Devices Based on Controlled Metallic Nanoparticle-Embedded InGaZnO TFTs , IEEE Electron Device Lett., Vol. 31, Issue 10, pp. 1134-1136 (2010).

[56] Jae Chul Park, Sangwook Kim, Sunil Kim, Changjung Kim, Ihun Song, Youngsoo Park, U-In Jung, Dae Hwan Kim, and Jang-Sik Lee*,   Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors having Double-Stacked Active Layers , Advanced Materials, Vol. 22, Issue 48, pp. 5512-5516 (2010)

[44] Jang-Sik Lee,* Yong-Mu Kim, Jeong-Hwa Kwon, Hyunjung Shin, Byeong-Hyeok Sohn, and Jaegab Lee,   Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer , Advanced Materials, January 12, 2009; Vol. 21, pp. 178-183.

[45] Jang-Sik Lee,* Min-Sun Kim, Dongjo Kim, Yong-Mu Kim, Jooho Moon, and Seung-Ki Joo,   Fabrication and characterization of low temperature polycrystalline silicon thin film transistors by ink-jet printed nickel-mediated lateral crystallization ,  Appl. Phys. Lett., March 23, 2009; Vol. 94, Article no. 122105.

[46] Heejung Park, Ara Kim, Chiyoung Lee, Jang-Sik Lee, and Jaegab Lee,   Formation of Cu nanocrystals on 3-mercaptopropyltrimethoxysilane monolayer by pulsed iodine-assisted chemical vapor deposition for nonvolatile memory applications , Appl. Phys. Lett., May 27, 2009; Vol. 94, Article no. 213508.

[47] Jaeman Jang, Changmin Choi, Jang-Sik Lee, Kyeong-Sik Min, Jaegab Lee, Dong Myong Kim, and Dae Hwan Kim,   Design of gate stacks for improved program/erase speed, retention and process margin aiming next generation metal nanocrystal memories ,  Semiconductor Science and Technology, November 2, 2009; Vol. 24, Article no. 114009.

[42] Yong-Mu Kim and Jang-Sik Lee*,   Tunable work functions of platinum gate electrode on HfO2 thin films for metal-oxide-semiconductor devices ,  Appl. Phys. Lett., March 10 2008; Vol. 92, Article no. 102901.

[43] Yong-Mu Kim and Jang-Sik Lee*,   Reproducible resistance switching characteristics of hafnium oxide-based non-volatile memory devices , J. Appl. Phys., December 15, 2008; Vol. 104, Article no. 114115.

[36] Jang-Sik Lee*, Jung-Kun Lee, Seung-Ki Joo, Precise control of phase transformation process in lead zirconate titanate thin films by focused line-beam scanning , Appl. Phys. Lett., March 26 2007; Vol. 90, Article no. 132908.

[37] Han, S.-H.; Kang, I.-S.; Song, N.-K.; Kim, M.-S.; Lee, Jang-Sik*; Joo, S.-K,  The Reduction of the Dependence of Leakage Current on Gate Bias in Metal-Induced Laterally Crystallized p-Channel Polycrystalline-Silicon Thin-Film Transistors by Electrical Stressing , IEEE Trans. Electron Devices, September 2007, Vol. 54, No. 9, pp. 2546-2550.

[38] Hyunjung Shin, Chanhyung Kim, Changdeuck Bae, Jang-Sik Lee, Jaegab Lee and Sunghan Kim,  Effects of ion damage on the surface of ITO films during plasma treatment , Applied Surface Science, September 15, 2007, Vol. 253, Issue 22, pp. 8928-8932.

[39] Jang-Sik Lee*, B. S. Kang, and Q. X. Jia,  Data retention characteristics of Bi 3.25 La 0.75 Ti 3 O 12 thin films on conductive SrRuO 3 electrodes , Appl. Phys. Lett., October 1 2007; Vol. 91, Article no. 142901.

[40] Chiyoung Lee, Jeong-Hwa Kwon, Jang-Sik Lee*, Yong-Mu Kim, Yoojung Choi, Hyunjung Shin, Byeong-Hyeok Sohn, and Jaegab Lee,  Nonvolatile nanocrystal charge trap flash memory devices using a micellar route to ordered arrays of cobalt nanocrystals , Appl. Phys. Lett., October 9 2007; Vol. 91, Article no. 153506.

[41] Jang-Sik Lee*, J. CHO, C. LEE, I. KIM, J. PARK, Y.-M. KIM, H. SHIN, J. LEE and F. CARUSO,   Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties ,  Nature Nanotechnology, December 2, 2007; Vol. 2, pp. 790-795.

[30] Hong Seong Kang, Sung Hoon Lim, Jae Won Kim, Hyun Woo Chang, Gun Hee Kim, Jong-Hoon Kim, Sang Yeol Lee, Y. Li, Jang-Sik Lee, J. K. Lee, M. A. Nastasi, S. A. Crooker and Q. X. Jia,  Exciton localization and Stokes' shift in Zn 1-x Cd x O thin films depending on chemical composition , J. Crystal Growth, Jan. 18 2006; Vol. 287, No. 1, pp. 70-73.

[31] Min-Sun Kim, Jang-Sik Lee, Young-Su Kim, and Seung-Ki Joo,  The Effects of Crystal Filter on Growth of Silicon Grains in Metal-Induced Lateral Crystallization , Electrochemical and Solid-State Letters, Feb. 1 2006; Vol. 9, No. 2, pp. G56-G58.

[32] Hong Seong Kang, Jae Won Kim, Jong Hoon Kim, Sang Yeol Lee, Y. Li, Jang-Sik Lee, J. K. Lee, M. A. Nastasi, S. A. Crooker, and Q. X. Jia,  Optical property and Stokes' shift of Zn 1-x Cd x O thin films depending on Cd content , J. Appl. Phys., March 15, 2006; Vol. 99, Article no. 066113.

[33] Jang-Sik Lee*, Chang-Seok Kang, Yoo-Cheol Shin, Chang-Hyun Lee, Ki-Tae Park, Jong-Sun Sel, Viena Kim, Byeong-In Choe, Jae-Sung Sim, Jungdal Choi, and Kinam Kim,  Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High-k Dielectrics and High-Work Function Metal-Gates for Multi-Gigabit Flash Memory , Jpn. J. Appl. Phys., April 2006; vol. 45, no. 4B, pp. 3213-3216.

[34] J.-K. Lee, R. E. Muenchausen, Jang-Sik Lee, Q. X. Jia, M. Nastasi, J. A. Valdez, B. L. Bennett, D. W. Cooke, Sang Yeol Lee,  Structure and optical properties of Lu 2 SiO 5 :Ce phosphor thin films , Appl. Phys. Lett., September 5 2006; Vol. 89, Article no. 101905.

[35] Min-Sun Kim, Nam-Kyu Song, Shin-Hee Han, Seung-Ki Joo, Jang-Sik Lee*,   Improvement of the electrical performance in metal-induced laterally crystallized polycrystalline silicon thin-film transistors by crystal filtering ,  Appl. Phys. Lett., December 4 2006; Vol. 89, Article no. 233503.

[26] Tuson Park, Z. Nussinov, K. R. A. Hazzard, V. A. Sidorov, A. V. Balatsky, J. L. Sarrao, S.-W. Cheong, M. F. Hundley, Jang-Sik Lee, Q. X. Jia, J. D. Thompson, Novel Dielectric Anomaly in the Hole-Doped La2Cu1-xLixO4 and La2-xSrxNiO4 Insulators: Signature of an Electronic Glassy State , Phys. Rev. Lett., Jan. 12 2005; Vol. 94, Article no. 017002.

[27] B. S. Kang, Jang-Sik Lee, L. Stan, L. Civale, R. F. DePaula, P. N. Arendt, and Q. X. Jia,  Ferromagnetic properties of epitaxial SrRuO3 films on SiO2/Si using bi-axially oriented MgO as templates , Appl. Phys. Lett, Feb. 14 2005; Vol. 86, pp. 072511-072513.

[28] Y. Lin, X. Chen, S. W. Liu, C. L. Chen, Jang-Sik Lee, Y. Li, Q. X. Jia, and A. Bhalla,  Epitaxial nature and anisotropic dielectric properties of (Pb,Sr)TiO3 thin films on NdGaO3 substrates , Appl. Phys. Lett., April 4 2005; Vol. 86, pp. 142902-142904.

[29] Min-Sun Kim, Jang-Sik Lee, Young-Su Kim and Seung-Ki Joo,  Control of the Crystal Orientation in Metal-Induced Lateral Crystallization, J. Korean Phys. Soc., Nov. 2005; v.47, no.93, pp. S404~S407.

[17] Y. Lin, X. Chen, S. W. Liu, C. L. Chen, Jang-Sik Lee, Y. Li, Q. X. Jia, and A. Bhalla,   Anisotropic in-plane strains and dielectric properties in (Pb,Sr)TiO3 thin films on NdGaO3 substrates ,  Appl. Phys. Lett., 26 Jan. 2004; vol.84, no.4, p.577-9.

[18] Jang-Sik Lee*, Q. X. Jia, Jung-Ho Park, Seung-Ki Joo, Woo Seok Yang, Nam Kyeong Kim, Seung Jin Yeom, and Jae Sung Roh,  Effect of Low-Energy Accelerated Ion Bombardment on the Properties of Metal-Organic Decomposition Derived SrBi2(Ta,Nb)2O9 Thin Films Processed at Low Temperature, J. Am. Ceram. Soc., APR 2004; v.87, no.4, p.720-723.

[19] Jang-Sik Lee*, Y. Li, Y. Lin, S. Y. Lee, and Q. X. Jia,   Hydrogen-induced degradation in epitaxial and polycrystalline BST thin films , Appl. Phys. Lett., 10 May 2004; vol.84, no.19, p.3825-7.

[20] Sang Yeol Lee, Y. Li, Jang-Sik Lee, J. K. Lee, M. A. Nastasi, S. A. Crooker, Q. X. Jia, Hong-Seong Kang, and Jeong-Seok Kang,  Effects of chemical composition on the optical properties of Zn1-xCdxO thin films , Appl. Phys. Lett., JUL 12 2004; v.85, no.2, p.218-220.

[21] Shin-Hee Han, Won-Cheol Jeong, Jang-Sik Lee*, Byung-Dong Kim, and Seung-Ki Joo, Formation of tunnel barrier using a pseudo-atomic layer deposition method and its application to spin-dependent tunneling junction , Appl. Phys. A-Mater. Sci. Process, August 2004; v.81, no.3, p611-615.

[22] Jang-Sik Lee*, B. S. Kang, Y. Lin, Y. Li, and Q. X. Jia,   Anisotropic dielectric properties of Bi3.25La0.75Ti3O12 thin films with different crystalline directions , Appl. Phys. Lett., Sep. 27 2004; Vol. 85, No. 13, pp. 2586-2588.

[23] B. S. Kang, Jang-Sik Lee, L. Stan, J.-K. Lee, R. F. DePaula, P. N. Arendt, M. A. Nastasi, and Q. X. Jia, Dielectric properties of epitaxial Ba0.6Sr0.4TiO3 films on SiO2/Si using bi-axially oriented ion-beam-assisted-deposited MgO as templates , Appl. Phys. Lett., Nov. 15 2004; Vol. 85, No. 20, pp. 4702-4704.

[24] Y. Lin, Jang-Sik Lee, H. Wang, Y. Li, S. R. Foltyn, Q. X. Jia, G. E. Collis, A. K. Burrell, and T. M. McCleskey,  Structure and dielectric properties of epitaxial Ba1-xSrxTiO3 films grown on LaAlO3 substrates by polymer-assisted deposition , Appl. Phys. Lett., Nov. 22 2004; Vol. 85, No. 21, pp. 4007-4009.

[25] Xiaoding Qi, Joonghoe Dho, Mark Blamire, Quanxi Jia, Jang-Sik Lee, Steve Foltyn, and Judith L. MacManus-Driscoll, Epitaxial growth of BiFeO3 thin films by LPE and sol-gel methods , J. Magnetism and Magnetic Materials, December 2004, Vol. 283, Issue 2-3, pp. 415-421.

[14] Jang-Sik Lee*, S. Y. Lee, and Q. X. Jia,  Lateral epitaxial growth of Ba0.6Sr0.4TiO3 thin films, Integrated Ferroelectrics, 2003; vol.55, p.933-8.

[15] P. Lu, Jang-Sik Lee, and Q. X. Jia,  Microstructural Properties of Ba0.6Sr0.4TiO3/RuO2 Multi-Layers Grown on MgO and YSZ by Pulsed-Laser Deposition,  Integrated Ferroelectrics, 2003; vol.55, p.965-72.

[16] Jang-Sik Lee*, H. Wang, S. Y. Lee, S. R. Foltyn, and Q. X. Jia,  Lateral epitaxial growth of (Ba,Sr)TiO3 thin films, Appl. Phys. Lett., 29 Dec. 2003; vol.83, no.26, p.5494-6.

[9] Jang-Sik Lee* and Seung-Ki Joo,  Self-limiting behavior of the grain growth in lead zirconate titanate thin films, J. Appl. Phys., SEP 1 2002; v.92, no.5, p.2658-2662.

[10] Jang-Sik Lee* and Seung-Ki Joo,  The role of grain-boundary on the hydrogen-induced degradation in thin-film ferroelectric capacitors,  IEEE Electron Device Letters, SEP 2002; v.23, no.9, p.517-519.

[11] Jang-Sik Lee* and Seung-Ki Joo,  Analysis of grain-boundary effects on the electrical properties of lead zirconate titanate thin films, Appl. Phys. Lett., SEP 30 2002; v.81, no.14, p.2602-2604.

[12] Jang-Sik Lee* and Seung-Ki Joo,  The Problem Originating from the Grain Boundaries in Dielectric Storage Capacitors, Solid-State Electronics, OCT 2002; v.46, no.10, p.1651-1657.

[13] Jang-Sik Lee* and Seung-Ki Joo,  Role of grain boundaries on the hydrogen-induced degradation in lead zirconate titanate thin films,  Appl. Phys. Lett., 21 Oct. 2002; vol .81, no.17, p.3230-2.

[5] Jang-Sik Lee* and Seung-Ki Joo,  Enhanced fatigue and data retention characteristics of lead zirconate titanate thin films by selectively nucleated lateral crystallization,  Jpn. J. Appl. Phys., JAN 2001; v.40, no.1, p.229-233.

[6] Chang-Wook Jeong, Jang-Sik Lee, and Seung-Ki Joo,  Plasma-assisted atomic layer growth of high-quality aluminum oxide thin films,  Jpn. J. Appl. Phys., JAN 2001; v.40, no.1, p.285-289.

[7] Jang-Sik Lee*, Jung-Ho Park, Jong-In Yun, Chan-Soo Kim, and Seung-Ki Joo,  Fatigue and data retention characteristics of the single-grained Pb(Zr,Ti)O3 thin films, J. Korean Phys. Soc., JUL 2001; v.39, no.1, p.184-188.

[8] Jung-Ho Park; Jang-Sik Lee; and Seung-Ki Joo,  MFIS and MFMIS structures using Pb(Zr,Ti)O3 films for nonvolatile memory devices,  Integrated Ferroelectrics, 2001; v.40, no.1-5, p.1579-1588.

[2] Jang-Sik Lee* and Seung-Ki Joo,  Introduction of selective nucleated lateral crystallization of lead zirconate titanate thin films for fabrication of high-performance ferroelectric random access memory, Jpn. J. Appl. Phys., NOV 2000; v.39, no.11, p.6343-6347.

[3] Jang-Sik Lee*, Byung-Il Lee, and Seung-Ki Joo,  Single-grained PZT thin films for high level FRAM integration-fabrication and characterization, Integrated Ferroelectrics, 2000; v.31, no.1-4, p.149-162.

[4] Eung-Chul Park, Jang-Sik Lee, Jung-Ho Park, Byung-Il Lee, and Seung-Ki Joo,  Effect of ion damage on the crystallization of PZT thin films,  Integrated Ferroelectrics, 2000; v.31, no.1-4, p.173-181.

[1] Jang-Sik Lee*, Byung-Il Lee, and Seung-Ki Joo,  Effects of process parameters on structure and magnetic properties of sputtered Ni-Zn ferrite thin films, IEEE Transactions on Magnetics, SEP 1999; v.35, no.5, pt.2, p.3415-3417.